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产品信息

硅光平台

产品类别: 硅光平台

Laxense的硅光平台(SiOB)是由半导体晶元处理技术制造的,保证高精度,低成本,大量产。Laxense开发了在表面粗糙度很小的硅光平台上制作精密金属、凸起和深槽的工艺。客户可定制各种单层或多层结构、金属和电极、以及各种物理结构和金属层设计。另外,电阻、电容以及传感器(如硅二极管)可按客户需求集成在硅光平台上。
LaXense’s silicon optical bench (SiOB) products are fabricated by semiconductor wafer processing technology which guarantees high precision, low cost and are currently in high volume manufacturing (HVM). LaXense developed optimized processes of making precise metal, ridges and trenches and with minimal defects and surface roughness on these SiOB products. Single or multiple layers of dielectrics, metal and solder, and a variety of physical structures and metal designs are available through custom order. Resistors, capacitors and thermal sensors (Si diodes) can also be monolithically integrated on the SiOB projects upon request.

- Metal: Ti/Al, Cr/Au, Ti/Pt/Au, etc.
o DC pads & high speed traces
o Multi-layer interconnect
o Edge wrap-around traces
- Micro solder AuSn, SnAg, InSn, etc.
- V-groove trenches
- Deep trench or through holes
- Post and spacers
- Si micro lenses
- Si hermetic sealing
- Resistors
- Capacitors
- Thermal sensors (Si diodes)
- Good thermal conductance
- Lithography-defined precise patterns
- Low cost silicon wafer process
- High customizability
- RoHS compliant

- 激光器衬底与热沉
- 离散有源、无源芯片的集成平台
- 光电探测器衬底
- RF传输线与集成终端电阻
- 光纤或透镜的无源对准

产品介绍

硅光平台
 

Description

Laxense的硅光平台(SiOB)是由半导体晶元处理技术制造的,保证高精度,低成本,大量产。Laxense开发了在表面粗糙度很小的硅光平台上制作精密金属、凸起和深槽的工艺。客户可定制各种单层或多层结构、金属和电极、以及各种物理结构和金属层设计。另外,电阻、电容以及传感器(如硅二极管)可按客户需求集成在硅光平台上。
LaXense’s silicon optical bench (SiOB) products are fabricated by semiconductor wafer processing technology which guarantees high precision, low cost and are currently in high volume manufacturing (HVM). LaXense developed optimized processes of making precise metal, ridges and trenches and with minimal defects and surface roughness on these SiOB products. Single or multiple layers of dielectrics, metal and solder, and a variety of physical structures and metal designs are available through custom order. Resistors, capacitors and thermal sensors (Si diodes) can also be monolithically integrated on the SiOB projects upon request.

Features

 


· Metal: Ti/Al, Cr/Au, Ti/Pt/Au, etc.
 o DC pads & high speed traces
 o Multi-layer interconnect
 o Edge wrap-around traces
· Micro solder AuSn, SnAg, InSn, etc.
· V-groove trenches
· Deep trench or through holes
· Post and spacers
· Si micro lenses
· Si hermetic sealing
· Resistors
· Capacitors
· Thermal sensors (Si diodes)
· Good thermal conductance
· Lithography-defined precise patterns
· Low cost silicon wafer process
· High customizability
· RoHS compliant

 

 


 

参数
 


标准厚度


     Si substrate: 400,500,1000 μm
     SiO2:0.5,1 μm
     Si3N4:0.2 μm
     Au:0.5,1 μm
     Al:0.5,1 μm
     AuSn:3 μm
     SnAg:3 μm
     Ti/Pt:0.1/0.25 μm
     Cr:0.1 μm

 
标准厚度公差

     Si substrate: ±25μm
     SiO2/Si3N4:  ±5%
     Metal:     ±5%
     Solder:     ±10%

PS:非标准厚度与公差可以根据客户需求定制!
 
集成元件

     · Resistors
      o Materials: NiCr, Cr
      o Resistance range: 10-100Ω (RF), 10-10000Ω (DC)
      o Tolerance: ±5%
      o TCR: ±50ppm/⁰C

     · Capacitors
      o Type: MIM
      o Capacitance (per unit area) range: 250-2000pF/mm2
      o Tolerance: ±10%

     · Thermal sensors
      o Type: Si diode
      o Sensitivity: ~2mV/K (constant current mode at typically 1-10μA)
      o Note: Sensing circuit is not included and an external controller is needed


 

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