Description

LaXense’s silicon optical bench (SiOB) products are fabricated by semiconductor wafer processing technology which guarantees high precision, low cost and are currently in high volume manufacturing (HVM). LaXense developed optimized processes of making precise metal, ridges and trenches and with minimal defects and surface roughness on these SiOB products. Single or multiple layers of dielectrics, metal and solder, and a variety of physical structures and metal designs are available through custom order. Resistors, capacitors and thermal sensors (Si diodes) can also be monolithically integrated on the SiOB projects upon request.

Features
 

· Metal: Ti/Al, Cr/Au, Ti/Pt/Au, etc.
 o DC pads & high speed traces
 o Multi-layer interconnect
 o Edge wrap-around traces
· Micro solder AuSn, SnAg, InSn, etc.
· V-groove trenches
· Deep trench or through holes
· Post and spacers
· Si micro lenses
· Si hermetic sealing
· Resistors
· Capacitors
· Thermal sensors (Si diodes)
· Good thermal conductance
· Lithography-defined precise patterns
· Low cost silicon wafer process
· High customizability
· RoHS compliant
 

参数
 

标准厚度

     Si substrate: 400,500,1000 μm
     SiO₂:0.5,1 μm
     Si₃N₄:0.2 μm
     Au:0.5,1 μm
     Al:0.5,1 μm
     AuSn:3 μm
     SnAg:3 μm
     Ti/Pt:0.1/0.25 μm
     Cr:0.1 μm

 
标准厚度公差

     Si substrate: ±25μm
     SiO₂/Si₃N₄:  ±5%
     Metal:     ±5%
     Solder:     ±10%

PS:非标准厚度与公差可以根据客户需求定制！
 
集成元件

     · Resistors
      o Materials: NiCr, Cr
      o Resistance range: 10-100Ω (RF), 10-10000Ω (DC)
      o Tolerance: ±5%
      o TCR: ±50ppm/⁰C

     · Capacitors
      o Type: MIM
      o Capacitance (per unit area) range: 250-2000pF/mm2
      o Tolerance: ±10%

     · Thermal sensors
      o Type: Si diode
      o Sensitivity: ~2mV/K (constant current mode at typically 1-10μA)
      o Note: Sensing circuit is not included and an external controller is needed